Manufacturable Processes for ≤ 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

Manufacturable processes to reduce both channel and external resistances (RExt) in CMOS devices are described. Simulations show that RExtwill become equivalent to strained Si channel resistance near the 32-nm logic node. Tensile stress in plasma-enhanced chemical-vapor-deposited SiNxliners is increased with UV curing, boosting the NMOS drive current by 20% relative to a neutral reference. W contact-plug resistance (Rc) is reduced by 40% by optimizing preclean, liner/barrier, and nucleation steps. Replacing the fill material with Cu reduces Rcby > 35% as compared to W. The Schottky barrier height of silicide contacts to p-Si is reduced by 0.12 eV with a 10% addition of Pt, resulting in a ~10% increase in the PMOS drive current. By implementing a two-step anneal process (spike + laser), the source/drain-extension resistance can be reduced by 20%.