Effects of the |H2Se|/|DMZn| molar ratio on the electrical and optical properties of nominally undoped ZnSe films grown on (100) GaAs substrates by low-pressure MOCVD have been studied. It was found that the carrier concentration in the films decreases with the molar ratio, while the luminescence intensity ratio between the NBE emission and that from deep centers increases. Furthermore, the distance between an inlet nozzle for DMZn and the substrate was found to give qualitatively the same effects to the properties of ZnSe films as those by the molar ratio.
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Yoshikawa et al. (1984) studied this question.
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