Oxidation growth rates of SiO 2 have been studied using as variables Si conductivity types, crystal growing methods, and bulk resistivity. Rates were determined in closed systems of both dry O 2 and steam over a temperature range of 800°–1300°C. The conclusion is drawn that the only factors controlling oxide growth rate were time, temperature, and ambient. Results reported include a study of the optical properties of the oxide films.
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Evitts et al. (1964) studied this question.