A polarization spectrometer has been used to investigate the optical properties of oxide films on silicon. Good agreement has been obtained between the experimental results and data calculated from the exact theory of reflection. This has enabled accurate measurements to be made of the refractive indices and thicknesses of films prepared in various ways. In addition, oxidation rates have been determined for films grown thermally at 1200°C.
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Claussen et al. (1963) studied this question.