Schottky-barrier infrared detectors have been fabricated with silicide electrodes formed by sequential vacuum deposition of 5-10-AA-thick Pt and 10-20-AA-thick Ir layers on p-type Si substrates and subsequent thermal annealing. The barrier heights of the Pt-Ir Schottky diodes are 0.16-0.9 eV, compared with 0.22 eV for Pt-only diodes, and the detector cutoff wavelengths extend well beyond 6 mu m. Furthermore, the Pt-Ir diodes exhibit higher detector quantum efficiency than either Pt-only or Ir-only diodes over a significant spectral range.>
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Tsaur et al. (1988) studied this question.
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