Spin dependent recombination: a /sup 29/Si hyperfine study of radiation-induced P/sub b/ centers at the Si/SiO/sub 2/ interface

The spin-dependent recombination (SDR) technique is used to observe the /sup 29/Si hyperfine spectra of radiation-induced P/sub b/ centers at the Si/SiO/sub 2/ interface in a MOSFET. The P/sub b/ center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The /sup 29/Si hyperfine spectra give detailed atomic scale information about the P/sub b/ center. The SDR results show that the /sup 29/Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect's local geometry lead to substantial differences in the defect's energy level. However, the /sup 29/Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage.>