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A novel electron spin resonance technique, spin-dependent recombination (SDR), permits extremely rapid, high-signal-to-noise-ratio electron spin resonance (ESR) measurements of electrically active radiation damage centers in (relatively) hard MOS transistors in integrated circuits. SDR was used to observe the radiation-induced buildup of P/sub bo/ and E' centers at relatively low concentration in individual MOSFETs in integrated circuits with
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Jupina et al. (1989) studied this question.
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