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December 1, 1981Journal of Applied Physics

Capture and release of electrons on Na+-related trapping sites in the SiO2 layer of metal-oxide-semiconductor structures at temperatures between 77 and 296 °K

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DDD. J. DiMariaIBM (United States)

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D. J. DiMaria (1981) studied this question.

synapsesocial.com/papers/6a93ba500d47ea57beb85a6ehttps://doi.org/10.1063/1.328711
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