Changes in properties of molecular-beam-epitaxy-grown GaAs by oxygen-ion (O+) implantation and annealing, such as crystallinity, carrier concentration, and sheet resistance, are investigated. Using these results, we developed a method of O+ implantation through an external base area to form a small buried collector and to minimize the product, RbCbc, of the base-collector capacitance Cbc and the base resistance Rb in an AlGaAs/GaAs heterojunction bipolar resistance Rb in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) fabricated by a multiple self-alignment process with one mask. High-frequency properties of HBT’s are improved by this method remarkably.
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Ota et al. (1988) studied this question.
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