We report on nitride laser diode lasing at short ultraviolet wavelengths. We first present room temperature operations of GaN/AlGaN multiple‐quantum‐well (MQW) laser diodes under pulsed current mode. Then we report on the results of thorough investigation of the device characteristics. The optical and temperature characteristics as well as the carrier recombination of the devices have been investigated. We lastly present the first demonstration of indium‐free nitride laser diode. The laser operation of the AlGaN MQW laser diodes open the door to laser operation at shorter ultraviolet wavelengths.
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Yoshida et al. (2011) studied this question.
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