Determination of the Retarded Diffusion of Antimony by SIMS Measurements and Numerical Simulations

The oxidation retarded diffusion (ORD) of antimony during dry oxidation is investigated at temperatures of 1000° and 1100°C. For the experiments float zone <100> silicon wafers with a pattern of silicon nitride and a free surface are used to obtain domains with normal intrinsic and retarded diffusion on the same wafers. Additionally, numerical simulations are performed to determine quantitatively the magnitude of ORD. The results are summarized and compared to published values. It seems remarkable that the recombination of self‐interstitials and vacancies at 1000°C is sufficiently fast to cause a significant retardation of the diffusion of antimony after only 500 min oxidation time.