Atomic Layer Epitaxy of AlAs Using Dimethylaluminumhydride/Trimethylaluminum Mixture as the Al Source

The growth of AlAs epitaxial layers was studied by using a mixture of dimethylaluminumhydride (DMAlH)/trimethylaluminum (TMAl) and arsine in a four step gas injection sequence which involves two steps of hydrogen purge separating DMAlH/TMAl and arsine at different pulse durations of the DMAlH/TMAl flow and at temperatures ranging from 250°C to 650°C. One- and two-monolayer self-limiting growths of AlAs were achieved depending on pulse duration of DMAlH/TMAl flow and growth temperature.