The Fermi level pinning at GaN and AlGaN surfaces was investigated in-situ by X-ray photoemission spectroscopy (XPS). The measurement revealed, that the pinning position is strongly affected by the Ga/N ratio during MBE growth. The effect of the surface potential on the electronic properties of two dimensional electron gases (2DEG) forming at AlGaN/GaN interfaces was studied by means of self-consistent Schrödinger-Poisson calculations.
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an et al. (2002) studied this question.
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