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The direct photolithographic definition of insulating, semiconductive, and conductive films was achieved by pyrolyzing positive photoresist (HPR-206). Control of the feature dimensions was realized by two setps, UV irradiation followed by slowly increasing the pyrolysis temperature. A cross-linked polymeric shell is produced which is resistant to pattern flow. Parameters investigated for their effect on final feature size include UV dose, pyrolysis atmosphere, rate of temperature increase, pyrolysis temperature, and original feature size. The preparation of patterned films from pyrolyzed photoresist eliminates several processing steps and demonstrates the potential of direct lithography of carbon for integrated circuit manufacture.
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Lyons et al. (1985) studied this question.
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