Deep levels introduced by room temperature 1 MeV electron irradiation in p+n photodiodes have been studied using deep level transient spectroscopy. Two electron traps and one hole trap have been observed after irradiation. A second hole trap is observed upon the annealing of the first hole trap. The energy levels associated with these traps, their cross-sections and their annealing behaviour have been determined.
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Mooney et al. (1979) studied this question.
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