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The author analyzes resonant electron tunneling in parallel-plane heterostructures that have a central well region enclosed by two generalized barriers, which are reflectors of the Bloch waves. A single Bloch pair is assumed for the central region as well as in the surrounding semi-infinite semiconductors. The transmission probability versus electron energy is obtained for this model in terms of the transmission probabilities of the two barrier elements taken separately and the quasi-classical transit time for the trapped electron to make one circuit of the central well layer. The implications and limitations of these results are briefly discussed.>
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Peter J. Price (1989) studied this question.
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