In0.53 Ga0.47 As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

We report on In0.53Ga0.47As n-channel multiple-gate field-effect transistors (MuGFETs or FinFETs) with a novel method of selectively regrown lateral (parallel to substrate) nanowires as channels. The device exhibits a minimum subthreshold slope of 85 mV/decade and drain-induced barrier lowering of 88 mV/V at VDS=0.05 V and LG=200 nm. At VDS=0.5 V, gm,max=1.67 mS/μm is achieved (LG=32 nm). The extrapolated cutoff frequency fTof 210 GHz and the maximum oscillation frequency fmaxof 250 GHz are the highest of any reported III-V multiple-gate MOSFET.