Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

In this work, we report that a Ni–InP alloy can be used as a source/drain (S/D) metal for InP metal-oxide-semiconductor field-effect transistors (MOSFETs), allowing us to employ the salicidelike self-align S/D formation. Ni–InP alloys have low sheet resistance under 100 Ω/◻ and Ni can be selectively etched without etching of Ni–InP. We also demonstrate operation of the metal S/D InP MOSFETs using Ni–InP alloy. The InP MOSFETs exhibit high Ion/Ioff ratio of 106 and low subthreshold swing of 101 mV/dec.