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January 1, 2018Electronic engineering Series 2 Semiconductor devicesOpen Access

Simulation of Radiation-Induced Drain Leakage Currents in Soi Mosfets at High Temperatures With Spice Model

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Abstract

- SPicE . . , 115054, . , . , . 12 SPICE , . : - / . TCAD SPICE - 0.35 120 . , n-

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synapsesocial.com/papers/6a944fed50e6398b90c7c666 https://doi.org/10.36845/2073-8250-2018-248-1-49-56

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