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A method to evaluate hot-carrier-induced NMOSFET degradation under dynamic stress is discussed, based on an empirical relation between device lifetime and substrate current in static stress. The device lifetime τ under dynamic stress is given byτ = A.Isub,peak-2.5/R, whereIsub,peakis the peak value of pulsive substrate current and R is its duty ratio. The device lifetime experimentally obtained in an inverter circuit is in good agreement with the calculation results obtained from the proposed method. This method is useful to estimate device lifetime in actual circuit operational conditions.
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Horiuchi et al. (1986) studied this question.
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