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The MBE growth of light emitting diodes based on junctions between n-ZnMgSe and p-ZnMgSeTe is reported. For optimized compositions of the n- and p-layer, doping levels as high as n=p=2×1018 cm−3 were obtained. The p contacts of these diodes are ohmic, and the voltage needed to achieve a given current density is comparable to that of the best ZnSe based p-n junctions reported in the literature. The diodes show green electroluminescence up to room temperature.
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Faschinger et al. (1994) studied this question.
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