Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO2metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO2based MOSFETs and SiC/SiO2based MOSFETs.
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Waskiewicz et al. (2016) studied this question.
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