Depth Profiling of Border Traps in MOSFET With High-$kappa$Gate Dielectric by Charge-Pumping Technique

Charge-pumping (CP) technique is proposed to simultaneously measure the border traps and interface-trap density(D_ it). The charge pumped per cycle(Q_ cp)versus high level(Vₕ)of gate pulse for various frequencies was used to observe the behavior of the bulk traps close to the interface as a function of the CP frequency. Evolution onQ_ cpas a function of frequency was successfully used to determine the depth profile of border-trap density near the high-$kappa$gate dielectric/Si interface. The influence of border trap in high-$kappa$dielectric on theD_ itmeasurement can be prevented by an appropriate selection of gate frequency in CP technique.