We have proposed a resolution enhancement lithography technique named NOLMEX. In this paper, we investigate the performance of this method by using the analytical relationship between line-and-space pattern resolution and N A, and by numerical calculation for isolated hole patterns. It is confirmed that this technique is useful for both kinds of patterns. Using the NOLMEX method, a 0.1-µ m-rule pattern can be fabricated by optical lithography.
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Shibuya et al. (1994) studied this question.
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