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A novel characterization technique for single event burnout (SEB) of power MOSFETs was developed. The technique is based on a pulse-height analyzer system for charge collection measurement with a modified charge-sensitive amplifier which has a very wide dynamic range. The data obtained by this technique give detailed information about the SEB mechanism of power MOSFETs. The experimental data suggested a position-independent charge collection mechanism along an ion track, and a new parameter for SEB hardness was proposed.>
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Kuboyama et al. (1992) studied this question.
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