Activation efficiency improvement in Si-implanted GaAs by P co-implantation

Co-implantation effects of N, P, and As are studied for Si-implanted GaAs by the Hall effect and photoluminescence measurements. The P co-implantation enhances and homogenizes the activation efficiency of the implanted Si, and decreases photoluminescence peak intensities of the SiAs and the GaAs acceptors. It also suppresses the variation of the Si activation efficiency among the crystal ingots by half. These results indicate that P co-implantation is a promising method for fabricating active layers of high-performance GaAs large scale integrated circuits.