Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature, Yao, Yong-Zhao, Ishikawa, Yukari, Sato, Koji, Sugawara, Yoshihiro, Danno, Katsunori, Suzuki, Hiroshi, Bessho, Takeshi
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Yao et al. (2012) studied this question.
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