Using 1 GeV/nucleon ions SEUs have been studied in two types of CMOS-SRAMs with respect to tilt angle and tilt direction. Tracks of upset bits, which have been observed under large tilt angles, were used to determine the charge collection depth in these devices.>
No takes yet. Share an insight, caveat, or question.
Dreute et al. (1994) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: