A single event latchup suppression technique for COTS CMOS ICs

This is the authors' abstract. We don't add key points for this paper.

Results are presented on technique using displacement damage from energetic ions to suppress single event latchup in commercial off-the-shelf (COTS) CMOS integrated circuits. Ions implanted through the back of a thinned chip degrade the parasitic bipolar transistors causing latchup without degrading chip functionality or the parametrics of the chip.