Enhanced H2-plasma effects on polysilicon thin-film transistors with thin ONO gate-dielectrics

This letter reports that passivation effects of the H/sub 2/-plasma on the polysilicon thin-film transistors (TFT's) were greatly enhanced if the TFT's have a thin Si/sub 3/N/sub 4/ film on their gate-dielectrics. Compared to the conventional devices with only the SiO/sub 2/ gate dielectric, the TFT's with Si/sub 3/N/sub 4/ have much more improvement on their subthreshold swing and field-effect mobility after H/sub 2/-plasma treatment.