Resistivity Correction Factor for the Four-Circular-Probe Method

A method which improves the accuracy of calculation of the resistivity correction factor (RCF) is described. The method is applied to a system which consists of a rectangular parallelepiped sample and a four-circular-probe array. The current probes are replaced by the equivalent current source and sink (ECSS). The ECSS is derived on the basis of the interactions associated with the current probes and the images. The average potentials are used as the potentials of the voltage probes. Numerical evaluations show that the images have an important contribution to the RCF. The method is useful in obtaining the specific contact resistance of a metal-semiconductor contact.