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Using a simple rapid heating process, Pb(Zr(0.52)Ti(0.48))O(3) (PZT) thick films prepared by hydrothermal method were separated from a Ti substrate. Scanning electron microscopy (SEM) revealed that the self-separated films were crack-free. After solution infiltration and high temperature annealing, the PZT thick films were shown to possess good electric properties. At 1 kHz, the dielectric constant and the loss were 593 and 0.05, respectively. The remnant polarization was 30.0 muCcm(2) at room temperature. A high frequency single element ultrasound transducer fabricated with these films showed a bandwidth at -6 dB of 73% at a center frequency of 67 MHz.
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Zhu et al. (2009) studied this question.
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