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March 1, 1983Journal of Applied Physics

Model calculations for accelerated As ion doping of Si during molecular beam epitaxy

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Authors

GBG. BajorKrakow Cardiovascular Research InstituteJGJ. E. GreeneLinköping University

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Bajor et al. (1983) studied this question.

synapsesocial.com/papers/6a9546cfaec9be1889e3cebehttps://doi.org/10.1063/1.332140
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