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In this paper, we developed a new method to grow robust ultrathin oxynitride (E/sub OT/=18 A) film with effective dielectric constant of 7.15. By NH/sub 3/-nitridation of Si substrate, grown ultrathin Si/sub 3/N/sub 4/ With N/sub 2/O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.
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Pan et al. (2001) studied this question.
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