Temperature dependences of the nonradiative multiphonon carrier capture and ejection properties of deep traps in semiconductors. I. Theoretical results

Proceeding from the recently developed semiempirical theory of Shockley‐Read processes a short survey of theoretical predictions is given on the temperature dependences of the nonradiative multiphonon carrier capture ejection properties of deep traps in semiconductors. At low temperatures the corresponding capture cross‐sections are but weakly dependent on temperature and vary in the cases of attraction, neutrality, and repulsion as T−1, T−1/2, and T−7/6× × exp {−3[θ/T]1/3}, respectively, where the parameter θ depends on the magnitude of the centre charge. At high temperatures, activation‐type dependences exp {− U/kT} play an important part where the activation energies U depend on the actual structure of the given traps. On the basis of the complete theory the temperature dependences of the capture cross‐sections and ejection frequency factors in the range of intermediate temperatures are visualized graphically.