Measurement of the density and translational temperature of Si(3p21D2) atoms in RF silane plasma using UV laser absorption spectroscopy

Determination of the absorption profile of the Si 288.2 nm line (3p 2 1 D 2 -3p4s 1 P 1 transition) in the radio frequency SiH 4 /Ar plasma generated in a plasma-enhanced chemical vapour deposition chamber was performed by using UV absorption spectroscopy with the second harmonic generation of a ring dye laser excited by a CW argon ion laser as a light source. The Si atom density at the 3p 2 1 D 2 level and the Si translational temperature were obtained from the measured absorption intensity and line width of the absorption coefficient of the 288.2 nm line respectively.