Reaction rate constant of Si atoms with SiH4molecules in a RF silane plasma

Ultraviolet absorption spectroscopy using a ring dye laser and a hollow cathode lamp was applied to measurement of Si(3p 2 , 1 D 2 ) and Si(3p 2 , 3 P 2 ) atom density decay in the afterglow of a radio frequency SiH 4 -Ar plasma. The dependence of the Si density decay rate on SiH 4 and Ar partial pressure and also on the radio frequency input power was investigated, from which Si(3p 2 , 1 D 2 )-SiH 4 reaction rate constant was determined to be (7.4+or-0.4)*10 -10 cm 3 molecule -1 s -1 , the Si(3p 2 , 3 P 2 )-SiH 4 reaction rate constant (3.5+or-1.0)*10 -10 cm 3 molecule -1 s -1 and the diffusion coefficient for Si(3p 2 , 1 D 2 ) in Ar (at 320 K) (4.0+or-0.8)*10 4 cm 2 Pa s -1 .