InAlAs avalanche photodiodes with very thin multiplicationlayer of 0.1 µm for high-speed and low-voltage-operation optical receiver

We have developed a separated absorption and multiplication (SAM) avalanche photodiode (APD) with the thinnest reported InAlAs multiplication layer of 0.1 µm and achieved 18.8 V operation, with high speed and a high GB product of 140 GHz. This makes it possible to realise a compact 10 Gbit/s APD receiver.