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We report on an InAsP-InGaP electroabsorption modulator at 1.3 μm integrated with a semiconductor amplifier. The fiber-to-fiber insertion gain reaches +10 dB. The 50-μm-long modulator section exhibits a bandwidth of 36 GHz and a -17-dB extinction ratio with 3-V drive voltage. The integrated amplifier produced an RF-link efficiency of -26 dB at 20 GHz without any external amplification.
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Devaux et al. (1997) studied this question.
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