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A monolithic GaInAsP/InP photovoltaic power converter (cell diam = 2.5 mm), optimized for power conversion at 1.06 µm, was successfuly fabricated by mesa isolation on semi-insulating InP substrates. An estimation of the quantum efficiency achievable with double heterostructures grown by liquid-phase epitaxy is given. Open-circuit voltages of 7.6 V, power-conversion efficiencies of 30 percent, and fill factors as high as 75 percent, were obtained from a device consisting of twelve cell segments connected in series.
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Ng et al. (1982) studied this question.
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