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May 27, 2009IEEE Electron Device Letters

HfOₗ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

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Authors

HLHeng Yuan LeeITRI InternationalPCPang-Shiu ChenMinghsin University of Science and TechnologyTWTai-Yuan WuIndustrial Technology Research Institute

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Lee et al. (2009) studied this question.

synapsesocial.com/papers/6a95d4cc83a7209ed75398bahttps://doi.org/10.1109/led.2009.2021004
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