The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE

The effects of tungsten-halogen lamp annealing on selectively doped (SD) GaAs/N-AlGaAs grown by MBE have been studied using Hall, C-V, and SIMS measurements. The changes in the electrical properties of SD GaAs/N-AlGaAs after lamp annealing have been greatly reduced in contrast to those of conventional furnace annealing. This was found to be caused primarily by the reduction of the diffusion of doped Si atoms in AlGaAs during the annealing. After lamp annealing at 900°C for 10 seconds, the electron mobility and the electron concentration of 2DEG of SD GaAs/N-AlGaAs heterostructure at 77 K remained very high, 74,000 cm2/Vs and 4.8×1011 cm-2, respectively. The values were 73% and 94% of the “as-grown” samples.