Experimental study demonstrates resilient sandwich diffusion barriers in bismuth telluride thermoelectric modules, highlighting a scalable approach to enhance device longevity.
High thermal stability of Bi 2 Te 3 -based thermoelectric devices is critically limited by interfacial degradation. Here, we demonstrate a gradient Ni-based composite film (crystalline Ni/amorphous NiCoCrMoTiAl alloy/crystalline Ni), fabricated via magnetron sputtering with power-gradient modulation, as an effective barrier layer of Bi 2 Te 3 thermoelectric modules. Among them, the inner-layer Ni enhances bonding strength via chemical bonding, while the outer-layer Ni facilitates the formation of a sound welding interface through its wetting property; the high-entropy amorphous intermediate layer eliminates grain boundaries and diffusion pathways, thereby suppressing interfacial reactions among Bi 2 Te 3, electrodes, and solders. The design combines low-temperature deposition (preserving thermoelectric properties), high film density (minimizing interface resistance), and strong chemical bonding (enhancing adhesion). It enables us to achieve a shear strength of 11.9 MPa and interface resistance of 4.25 μΩ·cm 2 for p-type Bi 2 Te 3, a shear strength of 10.1 MPa and interface resistance of 5.45 μΩ·cm 2 for n-type Bi 2 Te 3 . This approach provides a scalable solution for long-term thermoelectric modules.
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Shu et al. (2025) studied this question.
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