Analysis of interface states of Al/TiO2/Si0.3Ge0.7MIS structures using the conductance technique

TiO 2 films have been deposited at a low temperature (∼150 °C) using titanium tetrakis isopropoxide (TTIP) as an organometallic precursor on Si 0.3 Ge 0.7 heterolayers by a microwave plasma-enhanced chemical vapour deposition system. Interfacial properties of the as-deposited films have been characterized using capacitance–voltage and conductance–voltage techniques measured at different frequencies. The energy distribution of interface states and the relaxation time have been determined from G p /ω versus ω analysis. A D it level of Al/TiO 2 /SiGe MIS capacitors in the range of 2.87 × 10 11 eV −1 cm −2 (in E C -0.446) eV to 5.04 × 10 11 eV −1 cm −2 (in E C -0.696) eV has been observed from conductance measurements.