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The hydrogenated amorphous silicon-germanium (a-Si/sub 1-x/Ge/sub x/:H) pin X-ray detector has been fabricated successfully. It is found by introducing germanium into the amorphous silicon film, the X-ray detection efficiency is almost twice improved. This is due to the fact that the energy gap of a-Si/sub 1-x/Ge/sub x/:H is smaller than that of a-Si:H.
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Liu et al. (2001) studied this question.
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