Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO[sub 2] Grown on Strained SiGe

The effects of different growth temperatures on the liquid-phase-deposited silicon dioxide were examined using a metal-oxide-semiconductor (MOS) capacitor. The was grown on a strained SiGe layer with different growth temperatures of . A transition layer containing mixtures of and existed at the interface, and its width increased with growth temperature. The transition layer is suggested to be the issue of degrading because and are imperfect oxides, i.e., non-fully bridged oxides, hence showing a large leakage current and more defect centers in the fabricated MOS capacitor.