Formation of HfSiON/SiO/sub 2//Si-substrate gate stack with low leakage current for high-performance high-/spl kappa/ MISFETs

The authors found the method to form HfSiON film with an ultrathin SiO/sub 2/ interfacial layer on the Si substrate by oxidizing the HfSiN. The HfSiN film was deposited by using the metal-organic chemical vapor deposition reactor with the shower head, supplying metal (Hf and Si) precursors and NH/sub 3/ gas separately from discharge nozzles. The authors successfully decreased the leakage current of the metal insulator semiconductor diode with HfSiON/SiO/sub 2/ insulator of 1-nm equivalent oxide thickness to 0.036 A/cm/sup 2/ at V/sub fb/-1 V.