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The effects of vacuum and inert gas annealing of ultrathin (∼20 Å) tantalum pentoxide (Ta2O5) films deposited on Si(100), with and without nitrogen passivation, were examined. Without nitrogen passivation, annealing Ta2O5 to 820 °C for 10 min led to oxidized silicon at both the Si-Ta2O5 and Ta2O5-vacuum interfaces and some tantalum silicide formation at the Si-Ta2O5 interface. Nitridation inhibited these processes.
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Mao et al. (1999) studied this question.
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