Growth kinetics at 1100° are investigated as a function of mole ratio below 10% for (111), (100), (311), and (110) oriented wafers. It is concluded that the considerable increase of the oxidation rate in the presence of is caused by three reasons: The first is enhanced diffusion of O 2 and molecules in the oxide. The second is enhanced reactions at the interface, resulting from a catalytic action of . The third is the contribution of to the oxidation, which is formed by the reaction, . The diffusivity of O 2 and molecules in the oxide was measured by a technique which is based on dry or wet oxidation after an initial growth. Infrared spectroscopy of the output gas from the furnace and the observation of the interface through a microscope and secondary electron microscope revealed the nature of the enhanced reactions, which are closely related to gaseous etching of Si.
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Hirabayashi et al. (1973) studied this question.