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January 1, 1972IEEE Transactions on Nuclear Science

Radiation-Hardened Complementary MOS Using SiO2 Gate Insulators

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Authors

JPJ. L. PeelRockwell Automation (United States)GKG. KinoshitaThe University of Tokyo

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Peel et al. (1972) studied this question.

synapsesocial.com/papers/6a968ad5672df19136a6c4e1https://doi.org/10.1109/tns.1972.4326844
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